You signed in with another tab or window. Reload to refresh your session.You signed out in another tab or window. Reload to refresh your session.You switched accounts on another tab or window. Reload to refresh your session.Dismiss alert
Hardware implementation of a Double Pulse Test (DPT) platform for SiC MOSFETs. Features LTspice parasitic modeling, ANSYS Q3D extraction, and a novel 4-layer Vertical Multi-Loop PCB layout that minimizes parasitic inductance and switching losses for high-frequency wide-bandgap applications.
Supporting data for T. Reiter, M. Niendorf, J. Schapdick, "A Method for Individual Switching Energy Extraction in Si/SiC Fusion Switches", ECCE Europe, 2026 (planned publication)